publication date : apr., 2011 1 < low noise gaas hemt > mgf4953b leadless ceramic package description the mgf4953b super-low noise ingaas hemt (high electron mobility transistor) is designed for use in k band amplifiers. the lead-less ceramic package assures minimum parasitic losses. features low noise figure @ f=20ghz nfmin. = 0.55db (typ.) high associated gain @ f=20ghz gs = 10.5db (typ.) application c to k band low noise amplifiers quality grade gg recommended bias conditions v ds =2v , i d =10ma ordering information tape & reel 10,000pcs/reel (mgf4953b-01) tape & reel 10,000pcs/reel (mgf4953b-70) rohs compliant mgf4953b is a rohs compliant product. rohs compliance is indicated by the letter ?g? after the lot marking. absolute maximum ratings (ta=25 ? c ) symbol parameter ratings unit v gdo gate to drain voltage -3 v v gso gate to source voltage -3 v i d drain current 60 ma pt total power dissipation 50 mw t ch channel temperature 125 ? c t stg storage temperature -55 to +125 ? c electrical characteristics (ta=25 ? c ) symbol parameter test conditions limits unit min. typ. max v (br)gdo gate to drain breakdown voltage i g =-10 ? a -3 -- -- v i gss gate to source leakage current v gs =-2v,v ds =0v -- -- 50 ? a i dss saturated drain current v gs =0v,v ds =2v 15 -- 60 ma v gs(off) gate to source cut-off voltage v ds =2v,i d =500 ? a -0.1 -- -1.5 v gs associated gain v ds =2v, 9.0 10.5 -- db nfmin. minimum noise figure i d =10ma,f=20ghz -- 0.55 0.80 db note: gs and nfmin. are tested with sampling inspection. outline drawing fig.1 mitsubishi proprietary not to be reproduced or disclosed without permission by mitsubishi electric
< low noise gaas hemt > mgf4953b leadless ceramic package publication date : apr., 2011 2 fig.1 unit: mm gate source drain top side bottom ? ? 0.200.1 0.800.1 from "a" side view (2.30) (0.30) +0.20 -0.10 2.15 + 0 . 2 0 - 0 . 1 0 2 . 1 5 a 2 - 0 . 5 0 0 . 0 5 1 . 2 0 0 . 0 5 2-r0.275 2-r0.20 2 - ( 1 . 0 2 ) 4 - 0 . 5 5 0 . 0 5 2 - ( 2 . 2 0 ) ? ? square shape electrode is drain ? ? ? ?
< low noise gaas hemt > mgf4953b leadless ceramic package publication date : apr., 2011 3 typical characteristics (ta=25c) drain to source voltage v ds (v) gate to source voltage v gs (v) drain current i d ( ma ) i d vs. v ds 0 10 20 30 40 50 0123 drain to source voltage v ds (v) drain current i d (ma) ta=25 v gs =-0.1v/step i d vs. v gs 0 10 20 30 40 50 -1.00 -0.50 0.00 gate to source voltage v gs (v) drain current i d (ma) ta=25 v ds =2v nf & gs vs . i d 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 5 10 15 20 ?? id ( ma ) j? nf (db) 4 5 6 7 8 9 10 11 12 13 j gs (db) ta=25 v ds =2v f=20ghz nf gs
< low noise gaas hemt > mgf4953b leadless ceramic package publication date : apr., 2011 4 s parameters (vds=2v,id=10ma, ta=25 ? c) noise parameters (vds=2v, id=10ma, ta=25 ? c) measurement plane (2.2mm) board; ro4003c (rogers corp.) ? r=3.38, t=0.508mm, au (cu) =0.035mm note: we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices. freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.989 -4.0 5.212 166.6 0.038 82.4 0.689 -10.7 2 0.968 -20.4 5.101 152.0 0.046 72.4 0.669 -21.1 3 0.942 -36.8 4.989 137.3 0.054 62.4 0.640 -31.5 4 0.927 -53.2 4.877 122.7 0.062 52.4 0.604 -41.9 5 0.857 -69.5 4.766 108.0 0.070 42.4 0.554 -52.4 6 0.787 -85.8 4.655 93.4 0.078 32.4 0.505 -62.7 7 0.716 -101.5 4.524 79.3 0.085 23.5 0.454 -72.7 8 0.654 -119.2 4.378 64.9 0.093 13.5 0.399 -84.1 9 0.582 -135.3 4.162 52.0 0.095 4.9 0.341 -93.6 10 0.525 -152.8 4.008 39.5 0.095 -2.5 0.288 -102.8 11 0.494 -170.2 3.887 27.3 0.096 -8.4 0.250 -113.0 12 0.474 171.2 3.761 15.2 0.096 -14.2 0.212 -124.7 13 0.471 152.0 3.656 2.9 0.097 -20.6 0.180 -140.4 14 0.484 134.6 3.593 -9.4 0.096 -26.0 0.159 -156.4 15 0.501 118.4 3.522 -21.9 0.095 -33.2 0.155 -175.5 16 0.544 101.2 3.335 -36.1 0.098 -37.5 0.163 153.3 17 0.579 86.8 3.209 -49.3 0.099 -42.9 0.182 132.4 18 0.612 73.6 3.038 -62.7 0.101 -49.3 0.216 110.1 19 0.646 62.0 2.814 -73.7 0.102 -56.2 0.260 90.7 20 0.688 50.3 2.726 -85.1 0.107 -63.9 0.301 76.3 21 0.733 39.4 2.613 -96.7 0.112 -75.1 0.340 59.0 22 0.765 28.6 2.499 -108.3 0.115 -86.3 0.370 48.0 23 0.798 17.7 2.384 -120.0 0.119 -97.5 0.405 37.0 24 0.831 6.9 2.269 -131.6 0.123 -108.7 0.444 30.2 25 0.831 -3.9 2.152 -143.2 0.127 -119.9 0.483 23.1 26 0.814 -14.7 2.034 -154.8 0.131 -131.1 0.522 17.1 s22 s11 s21 s12 freq. nfmin rn (ghz) (db) (mag) (ang) () 12 0.38 0.44 140.9 2.5 13 0.40 0.40 160.3 1.5 14 0.43 0.38 -179.4 2.0 15 0.45 0.36 -158.4 2.0 16 0.48 0.36 -136.6 3.0 17 0.50 0.36 -114.2 4.0 18 0.53 0.38 -91.2 6.0 19 0.57 0.39 -67.9 8.5 20 0.63 0.41 -44.5 11.5 21 0.72 0.45 -21.1 15.0 22 0.80 0.48 2.1 19.0 23 0.92 0.54 25.2 24.0 24 1.00 0.57 48.1 29.5 25 1.14 0.61 70.9 37.5 26 1.24 0.63 93.6 50.0 ?
< low noise gaas hemt > mgf4953b leadless ceramic package publication date : apr., 2011 5 s parameters (vds=2v,id=10ma, ta=25 ? c) freq. s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.989 -13.0 4.537 165.8 0.014 78.9 0.637 -9.7 2 0.973 -25.9 4.502 152.9 0.028 71.8 0.629 -19.6 3 0.949 -38.7 4.472 140.4 0.041 62.7 0.621 -29.2 4 0.926 -52.0 4.460 127.3 0.054 53.2 0.608 -39.0 5 0.890 -64.9 4.431 114.9 0.066 44.4 0.592 -48.2 6 0.828 -81.1 4.394 99.8 0.076 33.4 0.539 -60.1 7 0.776 -95.6 4.311 86.3 0.085 24.1 0.505 -70.2 8 0.723 -110.6 4.230 73.2 0.093 15.2 0.469 -80.4 9 0.662 -126.6 4.094 59.9 0.099 5.4 0.423 -90.7 10 0.605 -142.6 3.943 47.4 0.102 -4.0 0.368 -100.2 11 0.551 -158.2 3.826 35.4 0.102 -12.9 0.318 -108.8 12 0.514 -174.5 3.740 23.7 0.100 -19.7 0.279 -116.3 13 0.488 167.0 3.622 11.2 0.099 -28.1 0.232 -126.2 14 0.486 149.0 3.572 -1.1 0.098 -32.1 0.203 -138.3 15 0.480 131.8 3.512 -12.6 0.094 -38.4 0.169 -148.1 16 0.509 113.0 3.425 -26.2 0.099 -43.0 0.148 -175.1 17 0.536 95.1 3.349 -39.1 0.099 -49.9 0.133 157.1 18 0.569 78.2 3.226 -52.1 0.100 -58.5 0.132 120.7 19 0.609 62.7 3.091 -66.1 0.099 -66.5 0.160 92.2 20 0.642 47.3 2.934 -79.2 0.096 -75.2 0.204 67.8 21 0.674 34.3 2.752 -91.8 0.091 -83.8 0.250 50.6 22 0.707 21.1 2.617 -104.8 0.089 -92.5 0.293 37.0 23 0.742 9.2 2.471 -117.4 0.082 -102.8 0.350 23.8 24 0.753 -2.2 2.307 -130.2 0.081 -111.9 0.390 13.5 25 0.775 -12.5 2.139 -142.4 0.072 -118.9 0.430 2.4 26 0.803 -22.5 2.008 -155.0 0.069 -135.9 0.474 -5.7 s11 s21 s12 noise parameters (vds=2v,id=10ma, ta=25 ? c) freq. rn nfmin (ghz) (mag) (ang) (db) 18 0.358 -137.2 0.12 0.51 20 0.372 -91.0 0.14 0.55 22 0.390 -47.7 0.63 0.77 24 0.417 -14.9 1.05 1.05 26 0.473 10.5 1.26 1.25 ? opt note) rn is normalized by 50ohm reference point reference point 2.2mm 1.20 0.65 1.0mm 4-0.4 gate drain hemt mount board: ? r=2.6 thickness=0.4mm note: we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
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